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Other articles related with "tunneling field effect transistor"：
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68501 |
Bin Lu(芦宾), Xin Ma(马鑫), Dawei Wang(王大为), Guoqiang Chai(柴国强),Linpeng Dong(董林鹏), and Yuanhao Miao(苗渊浩) |
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A non-quasi-static model for nanowire gate-all-around tunneling field-effect transistors |
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Chin. Phys. B
2023 Vol.32 (6): 68501-068501
[Abstract]
(180)
[HTML 0 KB]
[PDF 808 KB]
(137)
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18505 |
Ru Han(韩茹), Hai-Chao Zhang(张海潮), Dang-Hui Wang(王党辉), Cui Li(李翠) |
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Optimization of ambipolar current and analog/RF performance for T-shaped tunnel field-effect transistor with gate dielectric spacer |
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Chin. Phys. B
2019 Vol.28 (1): 18505-018505
[Abstract]
(820)
[HTML 1 KB]
[PDF 792 KB]
(165)
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97401 |
Shenyan Feng(冯申艳), Qiaoxuan Zhang(张巧璇), Jie Yang(杨洁), Ming Lei(雷鸣), Ruge Quhe(屈贺如歌) |
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Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures |
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Chin. Phys. B
2017 Vol.26 (9): 97401-097401
[Abstract]
(547)
[HTML 1 KB]
[PDF 1008 KB]
(248)
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97102 |
Liu Ying (刘颖), He Jin (何进), Chan Mansun (陈文新), Du Cai-Xia (杜彩霞), Ye Yun (叶韵), Zhao Wei (赵巍), Wu Wen (吴文), Deng Wan-Ling (邓婉玲), Wang Wen-Ping (王文平) |
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An analytic model for gate-all-around silicon nanowire tunneling field effect transistors |
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Chin. Phys. B
2014 Vol.23 (9): 97102-097102
[Abstract]
(712)
[HTML 1 KB]
[PDF 405 KB]
(8188)
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